Effect of Non-Uniform Doing on Gate C-V Characteristics of MOSFETS

dc.contributor.author	Islam, Muhammad Rakibul
dc.contributor.author	Hossain, Syed Atique
dc.date.accessioned	2023-03-27T04:35:49Z
dc.date.available	2023-03-27T04:35:49Z
dc.date.issued	2010-04-22
dc.identifier.uri	http://dspace.ewubd.edu:8080/handle/123456789/3952
dc.description	This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.	en_US
dc.description.abstract	The goal of this thesis is to determine the effects that the actual physical structure of a metal􀃽oxide·semiconductor (MOS) capacitor. A semi-classical numerical model is presented to investigate the effect of non-uniform substrate doping on gate C-V characteristics of MOSFETs. Poisson's equation is solved numerically neglecting quantum mechanical effects. Maximum surface potential is considered as equa! to 2¢F' Calculated gate C- V characteristic for step doping profi Ie and Gaus sian doping profile are compared with C- V for uniformly doped substrates. It is observed that non-uniform doping has great influence in C􀃾V characteristics ofMOSFETs in weak accumulation and depletion r egime. It also affects the threshold voltage.	en_US
dc.language.iso	en_US	en_US
dc.publisher	East West University	en_US
dc.relation.ispartofseries	;EEE00017
dc.subject	C-V characteristics of MOSFETs	en_US
dc.title	Effect of Non-Uniform Doing on Gate C-V Characteristics of MOSFETS	en_US
dc.type	Thesis	en_US