Abstract:
HIT (Heterojunction with Intrinsic Thin layer) solar cells have attracted growing
attention among all Si based PV technologies because of their prospect of further
improvisation of efficiency and cost reduction. A high efficiency a-Si:H (n)/a-Si:H (i)/c-Si
(p)/uc-Si (p+) HIT solar cell is simulated and studied here. AFORS-HET simulation tool is
used for simulation purpose. In this thesis, the I-V characteristics and energy band diagram of
HIT cell are analyzed. The impacts of the variations of emitter, intrinsic layer and substrate
thicknesses on the photovoltaic characteristics of solar cell are discussed. We have varied the
emitter, the intrinsic layer and the substrate thicknesses and observed that only the substrate
thickness variation affects the conversion efficiency significantly. The increase of substrate
thickness leads to increase of efficiency. We have simulated our HIT structure using
optimized values of thicknesses. With the optimized parameters combination, this HIT cell
reaches a high performance with conversion efficiency (η) of 24.25%, fill factor (FF) of
85.73%, open circuit voltage (VOC) of 783.1 mV, and short circuit current density (JSC) of
36.12 mA/cm2.
Description:
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.
