Physical Understanding of the Effect of the Interface Traps and Grain Boundary States on the Electrical Characteristics of P-type Polysilicon Nanowires Fabricated by Deposition and Spacer Etch Technique for Biosensors

dc.contributor.author	Rahman, Kazi Aousafur
dc.contributor.author	Alam, Md. Nur
dc.contributor.author	Hasan, Md. Kamrul
dc.date.accessioned	2014-12-09T08:15:20Z
dc.date.available	2014-12-09T08:15:20Z
dc.date.issued	6/6/2013
dc.identifier.uri	http://dspace.ewubd.edu/handle/2525/1040
dc.description	This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.	en_US
dc.description.abstract	Over the past decades, semiconductor nanowires attracted quite a lot of attractors due to their unique electrical characteristics suitable for biochemical sensors (1-4). The reason of interest is due to label free high sensitivity detection of Bio molecules (5-10) without expensive optical components (11-17). The ult-high sensitivity is due to their smaller size and large surface to volume ratio enable single charge at the surface of the nano wires to deplete or accumulate entire cross selection area of nanowies (18-19)	en_US
dc.language.iso	en_US	en_US
dc.publisher	East West University	en_US
dc.relation.ispartofseries	;EEE00121
dc.subject	Electrical Characteristics of P-type	en_US
dc.title	Physical Understanding of the Effect of the Interface Traps and Grain Boundary States on the Electrical Characteristics of P-type Polysilicon Nanowires Fabricated by Deposition and Spacer Etch Technique for Biosensors	en_US
dc.type	Thesis	en_US