ADS Implementation Of Carbon Nanotube Transistor Compact Model

dc.contributor.author	Khan, Tanvir Ahmed
dc.contributor.author	Shahriar, Raghib
dc.contributor.author	Rabbi, Khaled Fazle
dc.date.accessioned	2014-03-13T10:54:46Z
dc.date.available	2014-03-13T10:54:46Z
dc.date.issued	1/11/2012
dc.identifier.uri	http://dspace.ewubd.edu/handle/2525/158
dc.description	This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.	en_US
dc.description.abstract	The scaling down of devices has been the driving force in the advancement of technology since the beginning of 19th century. 65 nm technologies become conventional in 2006 and 45 nm technology was announced in 2007. But further scaling down is facing some serious limitations. These limitations are related to fabrication technology and device performances. In this work, we have implemented in ADS a 6-capacitor compact model of a carbon nanotube transistor proposed by J. Deng and H.-S P. Wong. The model includes phonon scattering and band to band tunneling current. The code is written in Verilog-A and it is linked to ADS by a transistor symbol of 4-terminals. The code is verified by simulating the I-V characteristics of nchannel and p-channel CNFETs.	en_US
dc.language.iso	en_US	en_US
dc.publisher	East West University	en_US
dc.relation.ispartofseries	;EEE00092
dc.subject	Electrical & Electronics Engineering	en_US
dc.title	ADS Implementation Of Carbon Nanotube Transistor Compact Model	en_US
dc.type	Thesis	en_US