Abstract:
A high efficiency GaAs/InAs quantum dot (QD) solar cell is designed embedding
InAs QD in as an intrinsic layer. Embedded QD boost the efficiency of the solar cell.
Without QD we achieve 14.1% efficiency of the GaAs Solar cell. When embedding
15 layers of InAs QDs in the intrinsic layer, at AM1.5 solar radiations, the proposed
cell structure had a Voc of 1.25 V, Jsc of 32.9073 mA.cm-2, a maximum power is
36.97mW.cm-2 and a fill factor of 89.9%, corresponding to an overall efficiency of
36.97%. Therefore, the positive effects of embedded quantum dots are proved to be
helpful in improving solar cell's performance.
Description:
This thesis submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electronics and Telecommunication Engineering of East West University, Dhaka, Bangladesh
