Enhancement of Conversion Efficiency of GaAs/InAs p-i-n Solar Cell Embedding Quantum Dot

dc.contributor.author	Sakib, Shadman
dc.contributor.author	Prova, Asma Sadia
dc.date.accessioned	2018-02-27T05:38:27Z
dc.date.available	2018-02-27T05:38:27Z
dc.date.issued	8/23/2017
dc.identifier.uri	http://dspace.ewubd.edu/handle/2525/2552
dc.description	This thesis submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electronics and Telecommunication Engineering of East West University, Dhaka, Bangladesh	en_US
dc.description.abstract	A high efficiency GaAs/InAs quantum dot (QD) solar cell is designed embedding InAs QD in as an intrinsic layer. Embedded QD boost the efficiency of the solar cell. Without QD we achieve 14.1% efficiency of the GaAs Solar cell. When embedding 15 layers of InAs QDs in the intrinsic layer, at AM1.5 solar radiations, the proposed cell structure had a Voc of 1.25 V, Jsc of 32.9073 mA.cm-2, a maximum power is 36.97mW.cm-2 and a fill factor of 89.9%, corresponding to an overall efficiency of 36.97%. Therefore, the positive effects of embedded quantum dots are proved to be helpful in improving solar cell's performance.	en_US
dc.language.iso	en_US	en_US
dc.publisher	East West University	en_US
dc.relation.ispartofseries	;ECE00161
dc.subject	GaAs/InAs p-i-n Solar Cell Embedding Quantum Dot	en_US
dc.title	Enhancement of Conversion Efficiency of GaAs/InAs p-i-n Solar Cell Embedding Quantum Dot	en_US
dc.type	Thesis	en_US