Abstract:
The goal of this thesis is to determine the effects that the actual physical structure of a
metaloxide·semiconductor (MOS) capacitor. A semi-classical numerical model is
presented to investigate the effect of non-uniform substrate doping on gate C-V
characteristics of MOSFETs. Poisson's equation is solved numerically neglecting
quantum mechanical effects. Maximum surface potential is considered as equa! to 2¢F'
Calculated gate C- V characteristic for step doping profi Ie and Gaus sian doping profile are
compared with C- V for uniformly doped substrates. It is observed that non-uniform
doping has great influence in CV characteristics ofMOSFETs in weak accumulation and
depletion r egime. It also affects the threshold voltage.
Description:
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.
