Abstract:
After more than 30 years of validation of Moore's law, the CMOS technology has already entered the nonoscale (sub-lOOnm) regime and faced strong limitations. The nanowire transistor is one of the candidates which have the potential; overcome the problems caused by shorts channel effect in SOI (silicon on insulator) MOSFETs.
Description:
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.
