Abstract:
In this thesis we have represented the performance analysis of different types of nano-transistors
such as single gate bulk MOSFET, double gate MOSFET, nanowire FET and CNTFET. Our
observation is based on the ballistic transport at the top of the barrier model. The scattering
effects on the current transport through the MOSFET are neglected in our observation.
FETToy simulation tool was used to calculate the On - Current (Ion) and transconductance (gm)
of different types of nano-transistors. We consider the change of insulator thickness (1ox) and
initial source Fermi level (EF). Comparative discussion about the effects on Ion and gm in terms of
changing MaS parameters are studied in this thesis. We observe that, the performance of nano-transistors improve with the switching of SG
MOSFET to DG MOSFET, DG MOSFET to Si nanowire FET, Si nanowire FET to CNTFET.
CNTFET has better On-Current (Ion) and transconductance (gm) over the other devices. On the
other hand FETToy cannot properly model Subthreshold Swing (S) and Drain Induced Barrier
Lowering (DIBL) in the top of the barrier model.
Description:
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.
