Abstract:
We investigated feasibility of applying 100nm thick and 1 m long p-type Si NW with a body doping of 1018/cm3 for sensor applications. It is found that such a p-type Si NW exhibits a subthreshold slope of 2772mV/dec to 9553.25mV/dec for backgate bias of 30V to -30V while applied VD was positive. For negative VD applications subthreshold slope vary from 2790mV/dec to 7989mV/dec when backgate bias is changed from 30V to -30V. Such a subthreshold slope is not promising sensor applications even though significant depletion is tried to be formed by 30V of backgate bias applications. Therefore, it may be concluded that 100nm thick SOI platform based Si NWs will not be suitable for sensor application at 1018/cm3 body doping.
Description:
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.
