Feasibility Study of Sensor Application of Heavily Doped Nano-Ribbons Realized on Conventional SOI Platform

Rahman, Mohammad Atikur; Tusha Falia, Charles Dickens; Razoan, Sheikh Md.

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dc.contributor.author	Rahman, Mohammad Atikur
dc.contributor.author	Tusha Falia, Charles Dickens
dc.contributor.author	Razoan, Sheikh Md.
dc.date.accessioned	2018-09-25T09:55:42Z
dc.date.available	2018-09-25T09:55:42Z
dc.date.issued	5/10/2015
dc.identifier.uri	http://dspace.ewubd.edu/handle/2525/2723
dc.description	This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.	en_US
dc.description.abstract	We investigated feasibility of applying 100nm thick and 1 m long p-type Si NW with a body doping of 1018/cm3 for sensor applications. It is found that such a p-type Si NW exhibits a subthreshold slope of 2772mV/dec to 9553.25mV/dec for backgate bias of 30V to -30V while applied VD was positive. For negative VD applications subthreshold slope vary from 2790mV/dec to 7989mV/dec when backgate bias is changed from 30V to -30V. Such a subthreshold slope is not promising sensor applications even though significant depletion is tried to be formed by 30V of backgate bias applications. Therefore, it may be concluded that 100nm thick SOI platform based Si NWs will not be suitable for sensor application at 1018/cm3 body doping.	en_US
dc.language.iso	en_US	en_US
dc.publisher	East West University	en_US
dc.relation.ispartofseries	;EEE00149
dc.subject	Sensor Application of Heavily Doped Nano-Ribbons Realized on Conventional SOI Platform	en_US
dc.title	Feasibility Study of Sensor Application of Heavily Doped Nano-Ribbons Realized on Conventional SOI Platform	en_US
dc.type	Thesis	en_US