Abstract:
Due to the high breakdown voltage and higher temperature GaN HEMT has drawn attention for high power electronics. In this work we have investigated the polarization effect of GaN HEMT and compared the result without adding the polarization effect. The Id – Vd characteristics, electric field, threshold voltage and transconductance operations has been observed here. We simulated the device in ATLAS simulator in TCAD with adding the polarization effect and compared the result in the same device without adding the polarization effect.
The polarization effect in the GaN HEMT device induces Two Dimensional Electron Gas (2DEG) in the AlGaN/GaN interface which increases the electron concentration of the polarization effect enabled device by three times of magnitude comparing without adding polarization effect.
The ID – VG characteristics curve also shows the polarization effect. Because of the effect a channel is created and drain current can be found where without adding the polarization effect no drain current can be found and the device doesn’t work as a transistor.
Description:
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.
